Atomic Layer Deposition Coating Service (Thermal-ALD)

Atomic Layer Deposition (ALD) is an advanced deposition technique enabling the precise and controlled deposition of ultra-thin films, typically a few nanometers thick. ALD excels in offering exceptional thickness control and uniformity, making it particularly suitable for coating high-aspect-ratio 3D structures. This technique relies on self-limiting surface reactions, leading to minimal pin-hole and particle levels, contributing to its applicability across diverse fields.
The precise control over film and interface, coupled with high-quality production, makes ALD highly desirable across diverse applications. ALD's advantages, including excellent uniformity, consistent film thickness on complex shapes, and low-temperature processing, make it ideal for various applications in microelectronics, nanotechnology, and biotechnology, especially when dealing with soft substrates like organic and biological samples.

The Atomic Layer Deposition (ALD) process:

Step 1: Substrate dosing with TMA precursor vapor, which self-limits through adsorption and reaction on the surface.

Step 2: Purging of residual precursor and reaction products.

Step 3: Low damage remote plasma exposure to the surface using reactive oxygen radicals, oxidizing the surface and removing surface ligands in a self-limiting reaction.

Step 4:Purging of reaction products from the chamber.

Step 3 varies only in the use of H2O for thermal processes or O2 plasma. Since ALD deposits (sub)angstrom thickness per cycle, precise control at the atomic scale is achieved.

 

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